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基于绝缘体上硅技术,提出并研制动态阈值nMOSFETs结构.阐述了动态阈值nMOSFETs的工作原理.动态阈值nMOSFETs的阈值电压从VBS=0V时的580mV动态变化到VBS=0.6V时的220mV,但是这种优势并没有以增加漏电流为代价.因此动态阈值nMOSFETs的驱动能力较之浮体nMOSFETs在低压情况下,更具有优势.工作电压为0.6V时,动态阈值nMOSFETs的驱动能力是浮体的25.5倍,0.7V时为12倍.而且浮体nMOSFETs中的浮体效应,诸如Kink效应,反常亚阈值斜率和击穿电压降低等,均被动态阈值nMOSFETs结构有效抑制.
Based on the silicon-on-insulator (SOI) technology, the dynamic threshold nMOSFETs are proposed and developed. The working principle of dynamic threshold nMOSFETs is described. The threshold voltages of dynamic threshold nMOSFETs vary from 580mV at VBS = 0V to 220mV at VBS = 0.6V. The advantages do not come at the expense of increasing the leakage current, so the dynamic threshold nMOSFETs have more driving power than the floating nMOSFETs at low voltage.The driving capability of the dynamic threshold nMOSFETs is 25.5 times that of the floating body at 0.6V, V, and 12 times the floating nMOSFETs floating body effects such as Kink effect, abnormal sub-threshold slope and breakdown voltage reduction, etc., are effectively inhibited by the dynamic threshold nMOSFETs structure.