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本文使用电子回旋共振等离子体增强化学沉积方法生长GaN。利用气体分配器产生一种局域高反应物浓度环境,在此环境下,测量了等离子体的电子温度Te,等离子体密度ni以及饱和离子流密度Ji与微波功率,气体压力的关系。根据这些参数,优选了沉积条件,得到了纯净的纤锌矿结构的GaN薄膜,并具有很好的光学特性。AES和XPS的实验表明薄膜中的氮空位及伴生镓被抑制。根据膜厚值,计算出的沉积速度为1μm/hr,比通常的速度大一个数量级。
In this paper, electron cyclotron resonance plasma enhanced chemical deposition is used to grow GaN. A gas distributor was used to generate a localized high reactant concentration environment. Under this environment, the relationship between plasma electron temperature Te, plasma density ni and saturated ion current density Ji and microwave power and gas pressure was measured. Based on these parameters, the deposition conditions are optimized, a pure wurtzite GaN film is obtained, and has good optical properties. Experiments with AES and XPS show that nitrogen vacancies and associated gallium in the films are suppressed. According to the film thickness, the calculated deposition rate was 1 μm / hr, an order of magnitude larger than usual.