【摘 要】
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A differential structure magnetic sensor is proposed.It is comprised of two new-type silicon magnetic sensitivity transistors (SMSTs) with similar characteristi
【机 构】
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Key Laboratory of Electronics Engineering, Heilongjiang University, Harbin 150080
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A differential structure magnetic sensor is proposed.It is comprised of two new-type silicon magnetic sensitivity transistors (SMSTs) with similar characteristics and has a common emitter,two bases and two collectors.The sensor is fabricated by micro electromechanical system technology on a high resistivity silicon wafer.At room temperature,when supply voltage VDD =10.0 V,all the base currents Ib1 of SMST1 and Ib2 of SMST2equa 6.0 mA,the absolute magnetic sensitivity for the two SMSTs are 46.8 m V/kG and 56.1 m V/kG,respectively,and the absolute magnetic sensitivity for the sensor is 102.9 m V/kG.Meanwhile,the temperature coefficient αvof the collector output voltage of the sensor is 0.044％/℃.The experimental results show that the magnetic sensitivity and the temperature characteristics of the sensor can be improved and ameliorated compared with a single SMST.
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