【摘 要】
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A series of Zn1-xCdxO thin films have been fabricated on sapphire by pulsed-laser deposition (PLD),successfully.To investigate the effect of Cd concentration on
【机 构】
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Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion,China Academy o
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A series of Zn1-xCdxO thin films have been fabricated on sapphire by pulsed-laser deposition (PLD),successfully.To investigate the effect of Cd concentration on structural and optical properties of Zn1-xCdxO films,x-ray diffraction (XRD),ultraviolet-visible spectroscopy (UV-vis),and x-ray photoelectron spectroscopy (XPS) are employed to characterize the films in detail.The XRD patte indicates that the Zn1-xCdxO thin films have high single-orientation of the c axis.The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration (x) according to the (αhv)2-hv curve.Furthermore,the band offsets of Zn1-xCdxO/ZnO heterojunctions are determinated by XPS,indicating that a type-Ⅰ alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.
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