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AT&T Bell实验室介绍了一种在1.3μm波长下工作的大功率、高速GaInAsP/InP激光器。采用三次外延生长法制作了这种激光器,器件具有SI-InP阻挡层,得到了很低的
AT & T Bell Labs introduced a high-power, high-speed GaInAsP / InP laser operating at 1.3 μm. This laser was fabricated using three epitaxial growth methods with a SI-InP barrier, resulting in a very low