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用分子束外延工艺己将AlGaAs/GaAs多重量子阱激光器与金属—半导体场效应晶体管单片集成在半绝缘衬底上。这种集成化激光器以20mA的低闽值电流实现了室温选续工作。激光器/场效应晶体管(FET)特性(如通过改变FET栅压线性地控制激光器的输出功率)已经得到了证实。激光器的输出功率与场效应晶体管栅压的转换率经测试高达3.3mW/V,上升与下降时间为1ns。
AlGaAs / GaAs multiple quantum well lasers and metal-semiconductor field effect transistors have been monolithically integrated on semi-insulating substrates by molecular beam epitaxy. This integrated laser enables continuous operation at room temperature with a low threshold current of 20mA. Laser / field-effect transistor (FET) characteristics, such as controlling the output power of a laser linearly by changing the FET gate voltage, have been demonstrated. The laser's output power and field-effect transistor gate voltage slew rates have been tested up to 3.3mW / V with rise and fall times of 1ns.