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利用国产ZFL 018型高压单晶炉和液封直拉(LEC)法生长了掺碲(硫)GaP单晶,其常温电学参数为;n_(Te,s)～(2～15)×10~(17)cm~(-3);μ_n～(86～134)cm~2/sv;位错密度(1～4)×10~4cm~(-2)。
The GaTe single crystal doped with tellurium (sulfur) was grown by the domestic ZFL 018 high pressure monocrystal furnace and the liquid seal Czochralski (LEC) method. The electrical parameters of nPrTe, (17) cm ~ (-3); μ_n ~ (86 ~ 134) cm ~ 2 / sv; dislocation density (1 ~ 4) × 10 ~ 4cm ~ (-2).