Effect of deposition conditions on the physical properties of Sn_xS_y thin films prepared by the spr

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Tin sulfide thin films(Sn_xS_y) with an atomic ratio of y/x = 0.5 have been deposited on a glass substrate by spray pyrolysis.The effects of deposition parameters,such as spray solution rate(R),substrate temperature (T_s) and film thickness(t),on the structural,optical,thermo-electrical and photoconductivity related properties of the films have been studied.The precursor solution was prepared by dissolving tin chloride(SnCl_4,5H_2O) and thiourea in propanol,and Sn_xS_y thin film was prepared with a mole ratio of y/x = 0.5.The prepared films were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM) and UV-vis spectroscopy. It is indicated that the XRD patterns of Sn_xS_y films have amorphous and polycrystalline structures and the size of the grains has been changed from 7 to 16 nm.The optical gap of Sn_xS_y thin films is determined to be about 2.41 to 3.08 eV by a plot of the variation of(αhv)~2 versus hv related to the change of deposition conditions.The thermoelectric and photo-conductivity measurement results for the films show that these properties are depend considerably on the deposition parameters. Tin sulfide thin films (Sn_xS_y) with an atomic ratio of y / x = 0.5 have been deposited on a glass substrate by spray pyrolysis. The effects of deposition parameters, such as spray solution rate (R), substrate temperature (T_s) and film thickness (t), on the structural, optical, thermo-electrical and photoconductivity related properties of the films have been studied. The precursor solution was prepared by dissolving tin chloride (SnCl_4,5H_2O) and thiourea in propanol, and Sn_xS_y thin film was prepared The prepared films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. It is indicated that the XRD patterns of Sn_xS_y films have an amorphous and polycrystalline structures and the size of the grains has been changed from 7 to 16 nm. The optical gap of Sn_xS_y thin films was determined to be about 2.41 to 3.08 eV by a plot of the variation of (αhv) ~ 2 versus hv related to the change of deposition conditions. thermoele ctric and photo-conductivity measurement results for the films show that these properties are depend substantial on the deposition parameters.
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