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为了深入理解近紫外波段NEAGaN阴极的光谱响应特性,在超高真空系统中对MOCVD生长的不同发射层厚度和掺杂浓度的三个样品进行激活实验,并在线测试样品光谱响应.利用反射式GaN阴极量子效率公式和最小二乘法对入射光波长为0.25—0.35μm之间的阴极响应量子效率实验数据进行拟合,分别得到后界面复合速率和拟合直线L的斜率,并使用量子效率公式对入射光波长为0.35μm时的反射式GaN阴极光谱响应量子效率进行仿真.结果表明,后界面复合速率和直线L的斜率都能很好地反映GaN阴极的响应性能,当GaN阴极后界面复合速率小于105cm/s,发射层的厚度取0.174—0.212μm时,阴极光谱响应性能最好.
In order to understand the spectral response characteristics of NEAGaN cathode in the near ultraviolet region, three samples with different emission layer thickness and doping concentration grown by MOCVD were tested in an ultra-high vacuum system and the spectral response of the sample was measured online. The cathode quantum efficiency formula and the least squares method were used to fit the experimental data of the quantum efficiency of cathode response with the incident light wavelength of 0.25-0.35μm. The interface recombination rate and the slope of fitting line L were obtained respectively. The quantum efficiency formula The results show that both the recombination rate of the back interface and the slope of the straight line L can well reflect the response performance of the GaN cathode. When the recombination rate of GaN cathode interface Less than 105cm / s, the thickness of the emissive layer takes 0.174-0.212μm, the cathode spectral response is the best.