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采用氧化钒薄膜、低应力介质膜和CMOS读出电路技术,研制了单片式128×1非致冷焦平面.氧化钒薄膜的制备采用了一种新的方法,焦平面的信号读出采用了CTIA积分方式.应用一种双频PECVD技术制备了低应力氮化硅薄膜,有效改善了微桥的平整度.通过氮化硅和氧化钒薄膜自身的红外吸收,焦平面在8～14μm波段的平均响应率达到8.2×104V/W,平均D*达到2.3×108cmHz1/2/w.焦平面的均匀性需要进一步改善.
The monolithic 128 × 1 uncooled focal plane was fabricated by using vanadium oxide film, low stress dielectric film and CMOS readout circuit. A novel method was adopted to prepare the vanadium oxide film. The signal readout of focal plane CTIA integration method was used to fabricate a low-stress silicon nitride film by using a dual-frequency PECVD technique to effectively improve the planarity of the micro-bridge. The infrared absorption of the silicon nitride and vanadium oxide films by themselves shows that the focal plane is in the 8-14 μm band Average response rate of 8.2 × 104V / W and an average D * of 2.3 × 108cmHz1 / 2 / w.The uniformity of the focal plane needs to be further improved.