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随着环保意识以及节能需求的不断增加,功率器件的市场越来越大,沟槽型功率器件由于可以在有效的面积上形成较低的导通电阻,得到了广泛的应用。在良率测试中,漏电作为一个重要的参数,具有很多种可能的失效机制。研究一种经常出现于正方形元胞结构中、击穿电压正常但漏电却很高的特殊现象,给出“双MOS管”的漏电模型,立体结构中的侧棱部分决定了漏电的大小。通过模拟及实际流片,使用比较简单的调整阱注入的方式,验证模型的正确性,在维持击穿电压等参数不变的情况下,正方形元胞的漏电得到了极大的降低,获得了同条状型元胞同样的器件性能。虽以正方形元胞为例做了研究,但其理论模型和解决方案同样适用于其他具有多个侧面和侧棱的元胞结构,如六边形等。
With the increasing awareness of environmental protection and the increasing demand for energy saving, the market of power devices is getting larger and larger. The trench power devices have been widely used because they can form low on-resistance in an effective area. In yield testing, leakage is an important parameter with many possible failure mechanisms. To study a special phenomenon often occurs in the square cell structure, the breakdown voltage is normal but the leakage is very high, given “double MOS tube ” leakage model, the side edge of the three-dimensional structure determines the size of the leakage . By simulating the actual flow and using a simple method of adjusting the well injection, the correctness of the model is verified. Under the condition of maintaining the breakdown voltage and other parameters unchanged, the leakage of the square cells is greatly reduced, The same device with the same type of cell performance. Although the example of a square cell has been studied, its theoretical model and solution are equally applicable to other cellular structures with multiple side and side edges, such as a hexagon.