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本文介绍作为平面结构慢波系统耦合阻抗测量用的介质薄片(云母片,陶瓷片等)介电常数ε_r的测量方法——谐振微扰法;并考虑到测试腔耦合元件电纳对测量结果的影响,提出了修正公式。在三厘米波段,对几种介质薄片进行了实际测量,并与传输线驻波比法进行了比较。这种测量方法还适用于各种半导体材料薄膜介电特性的测量。
In this paper, as a method to measure the permittivity ε_r of dielectric thin films (mica chips, ceramic chips, etc.) used for measuring the coupling impedance of planar structures in slow-wave systems, the resonant perturbation method is introduced. Considering the influence of the cavity coupling element susceptance on the measurement results Influence, put forward the correction formula. In the three centimeter band, several kinds of media sheets were actually measured and compared with the transmission line standing wave ratio method. This measurement method is also suitable for measuring the dielectric properties of thin films of various semiconductor materials.