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采用微波等离子体化学气相沉积法（ＭＰＣＶＤ），以Ｎ２、ＣＨ４作为反应气体合成碳氮膜。通过控制反应温度、气体流量、微波功率、反应气压等工艺条件，在Ｓｉ和Ｐｔ基片上，进行β－Ｃ３Ｎ４晶态薄膜的合成研究。扫描电镜（ＳＥＭ）下观察到生长在Ｓｉ基底上的薄膜具有六角晶棒的密排结构。扫描隧道显微镜（ＳＴＭ）下观察到在Ｐｔ基底上生长的碳氮薄膜由针状晶粒组成。ＥＤＸ分析表明，随沉积条件的不同，Ｓｉ基底上的氮碳薄膜中Ｎ／Ｃ在１．０到２．０之间；Ｐｔ基底上生长的碳氮薄膜Ｎ／Ｃ在０．８～１．３之间。Ｘ射线衍射分析（ＸＲＤ）发现薄膜中含有β－Ｃ３Ｎ４和α－Ｃ３Ｎ４。
Microwave plasma chemical vapor deposition (MPCVD) was used to synthesize carbon nitride film with N2 and CH4 as reaction gases. By controlling the reaction temperature, gas flow rate, microwave power, reaction pressure and other process conditions, the synthesis of β-C3N4 crystalline thin films on Si and Pt substrates. Scanning electron microscopy (SEM) observed that the thin film grown on a Si substrate has a hexagonal rod close-packed structure. It was observed under a scanning tunneling microscope (STM) that a carbonitride film grown on a Pt substrate consisted of acicular grains. EDX analysis showed that the N / C ratio of Si / carbon films was between 1.0 and 2.0 with different deposition conditions and the N / C ratio of carbon and nitrogen films grown on Pt substrate was 0.8 ~ 1. 3 between. X-ray diffraction analysis (XRD) found that the film contains β-C3N4 and α-C3N4.