论文部分内容阅读
用卢瑟福背散射／沟道技术研究了ＩＭｅＶＳｉ￣＋衬底加温注入Ａｌ_（０．３）Ｇａ_（０．７）Ａｓ／ＧａＡｓ超晶格和作为比较的ＧａＡｓ晶体后晶格的损伤积累与注入剂量的关系。实验结果表明，在注入剂量比较小的情况下，两种晶体都只有很轻微的损伤；动态退火过程的存在抑制了晶格损伤的积累。但在较高的注入剂量下，在几乎无损伤的表面下两种晶体中都形成了损伤埋层，且ＧａＡｓ中损伤峰处的损伤程度和损伤峰的宽度都大于Ａｌ_（０．３）Ｇａ_（０．７）Ａｓ／ＧａＡｓ超晶格中的情形，根据级联碰撞理论分析了晶体中的损伤积累过程，并从化学键相对强度差异的角度定性地解释了ＧａＡｓ和Ａｌ_（０．３）Ｇａ_（０．７）Ａｓ／ＧａＡｓ超晶格实验结果的不同。
The damage accumulation in the lattice of Al_ (0.3) Ga_ (0.7) As / GaAs superlattice after IMeVSi ~ + substrate implantation and GaAs crystal as a comparative example was investigated by Rutherford backscattering / channeling technique Relationship with injected dose. The experimental results show that there is only a slight damage to both crystals when the implantation dose is relatively small, and the existence of dynamic annealing inhibits the accumulation of lattice damage. However, at higher implantation dose, buried implants were formed in both crystals with almost no damage, and the damage degree and the width of damage peak in GaAs were greater than that of Al_ (0.3) Ga_ (0.7) As / GaAs superlattice, the damage accumulation in the crystal was analyzed according to the cascade collision theory, and the effects of GaAs and Al_ (0.3) Ga_ (0.7) As / GaAs superlattice experiment results are different.