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日本富士通研究所采用电子束直接描画和选择干法腐蚀工艺制成了具有良好特性的高频高电子迁移率晶体管,这是在九月份举行的1982年秋季第43届应用物理学会学术讲演会上发表的。器件制作过程如下:在掺Cr的半绝缘衬底上,用MBE法连续外延生长非掺杂GaAs层、掺硅的n型Al_xGa_(1-x)As层(x=0.3)、n型Al_xGa_(1-x)As层(x=0~0.3)和n型GaAs层,衬底温度皆为680℃。然后,为了进行器件隔离,用离子束腐蚀台面(Ar500V,~0.3μm),接着再形成AuGe/Au的源一漏电极的剥离层和金属层,再用选择干法腐蚀法腐蚀成凹槽栅,
Japan’s Fujitsu Institute of electron beam direct drawing and selection of dry etching process has been made with good characteristics of high frequency and high electron mobility transistor, which is held in September of the 43rd session of the 1982 Applied Physics Society of Fall lecture Published. The device fabrication process is as follows: On the Cr-doped semi-insulating substrate, an un-doped GaAs layer, a silicon-doped n-type Al x Ga 1-x As layer (x = 0.3), an n-type Al x Ga x 1-x) As layer (x = 0~0.3) and an n-type GaAs layer, the substrate temperature was 680 ° C. Then, for device isolation, the mesa (Ar500V, ~0.3μm) was ion beam ablated, and then the delamination and metal layers of the AuGe / Au source-drain electrode were formed, followed by selective dry etching to etch the trench gates ,