本文总结了Ⅱ-Ⅴ族锑化物半导体材料的进展,其中包括生长的物理化学原理和主要工艺,介绍了主要的锑化物体单晶、薄膜和结构材料,并列举了它们的性质以及这些材料应用于光电器件方面的最新结果. This article summarizes the advances in Group II-V antimonide semiconductor materials, including the physical and chemical principles of growth and major processes, the major antimonide single crystal, thin films and structural materials introduced, their properties, and the application of these materials The latest results in optoelectronic devices.