报道了一种由波长锁定878.6nm半导体激光器抽运Nd:YVO4晶体的1064nm激光器,当晶体吸收7.41W的抽运功率时获得了5.75W的1064nm激光输出,相对于吸收功率的斜率效率为80.2%,光光转换率为77.6%,并且对波长锁定878.6nm,非波长锁定的808nm,878.6nm抽运的激光器的温度特性进行了研究,结果表明利用波长锁定878.6nm作为抽运源的激光器在10℃~40℃的温度变化范围内具有很好的输出稳定性。 A 1064nm laser pumping Nd: YVO4 crystal with a wavelength locked 878.6nm semiconductor laser was reported. When the crystal absorbs a pumping power of 7.41W, a laser output of 5.75W at 1064nm is achieved, with a slope efficiency of 80.2% with respect to absorbed power. , And the light-to-light conversion rate was 77.6%. The temperature characteristics of a wavelength-locked 878.6 nm, non-wavelength locked 808 nm, 878.6 nm laser were studied. The results show that the laser using wavelength- ℃ ~ 40 ℃ temperature range with good output stability.