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设计了一种将薄膜 a- Si PIN光敏传感单元与 OL ED有机发光显示单元合二为一的新型图像传感显示器件 ;通过对每个单元的分别建模以及叠层器件的串联结构特点 ,对器件单元像素的电流电压特性进行了模拟 .结果表明 :器件驱动电压的降低主要通过增大 OL ED的幂指数因子实现 ;薄膜 a- Si PIN的灵敏度对器件灵敏度有决定性的影响 ;降低 a- Si PIN隙态密度能有效地展宽器件的线性响应区域 ;器件应用领域的不同 ,对 a- Si PIN的并联等效电阻的大小有不同的要求 .
A new type of image sensing display device is designed, which integrates a-Si PIN photosensitive cell and OL ED organic light-emitting display cell. Through the modeling of each cell and the series structure of the stacked device , The current and voltage characteristics of the device pixel are simulated.The results show that the driving voltage of the device is reduced mainly by increasing the exponential factor of OL ED.The sensitivity of a-Si PIN film has decisive influence on the sensitivity of the device, - Si PIN gap density can effectively broaden the linear response area of the device. Different application fields of the device have different requirements on the parallel equivalent resistance of a-Si PIN.