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采用共振能 E_R=872.1 keV,宽度 Γ=4.2 keV的~(19)F(P,αγ)~(16)O共振核反应测定了~(19)F~+离子注入Pb_(1-x)Sn_xTe、CdTe和Si衬底中氟的深度分布.用参考函数和参数优选法对实验测得的激发产额曲线进行去卷积计算,从而求得了氟的真实深度分布,同时确定了~(19)F~+离子注入Pb_(1-x)Sn_xTe、CdTe和Si材料中投影射程分布参数 R_p,△R_p和 SK.理论上计算了上述射程分布参数.实验与理论结果比较表明.R_p和△R_p的实验值与理论值符合得较好.文中讨论了利用共振核反应技术研究低速离子在固体材料中阻止本领的可能性.
(19) F ~ + ions implanted Pb_ (1-x) Sn_xTe were measured by ~ (19) F (P, αγ) ~ (16) O resonance nuclear resonance with resonance energy E_R = 872.1 keV and width Γ = 4.2 keV. The depth distribution of fluorine in CdTe and Si substrates was determined by deconvolution of the measured excitation yield curve with the reference function and the parameter optimization method to obtain the true depth distribution of fluorine, + Ion injection into the Pb_ (1-x) Sn_xTe, CdTe and Si materials, the parameters of the projection range distribution R_p, ΔR_p and SK were calculated theoretically.The experimental and theoretical results show that the experimental values of R_p and ΔR_p In line with the theoretical value is better.In this paper, the use of resonance nuclear reaction technology to study the low-speed ions in the solid material to prevent the possibility of ability.