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利用脉冲激光沉积 (PLD)技术在镀钛的陶瓷衬底上制备出了非晶态氮化硼薄膜 ,借助于X射线衍射(XRD)、扫描电子显微镜 (SEM )及Raman光谱分析了该薄膜的结构 ,并研究了薄膜场致电子发射特性 ,阈值电场为4 6V μm ,当电场为 9V μm时 ,电流密度为 5 0 μA cm2 。
An amorphous boron nitride thin film was prepared by pulsed laser deposition (PLD) on a titanium-coated ceramic substrate. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy The field emission characteristics of the films were studied. The threshold electric field was 46V μm. When the electric field was 9V μm, the current density was 50 μA cm 2.