论文部分内容阅读
介绍了最近开发的1200V和1700VIGBT模块的特性。该模块由沟槽栅极和电场截止结构的新型IGBT器件组装而成。由于采用了先进的封装技术,这种新型IGBT模块导致了更高的功率集成。进而,总功率损耗比常规IGBT模块的约减少了25%。
Introduces the recently developed 1200V and 1700VIGBT module features. The module consists of a new IGBT device with a trench gate and an electric field cut-off structure. Thanks to advanced packaging technology, this new IGBT module results in higher power integration. Furthermore, the total power loss is reduced by about 25% over the conventional IGBT module.