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采用三靶磁控共溅射法在玻璃衬底上制备了Nb掺杂TiO_2透明导电薄膜。研究了在不同氧含量时薄膜的结构和光电性能。实验结果表明:氧含量的变化能改变Nb掺杂TiO_2薄膜晶体的晶粒尺寸、表面形貌、透光率和电阻率,当溅射氩气中通入2%氧气时,可得到性能最佳的锐钛矿相Nb掺杂TiO_2薄膜,所得薄膜可见光透过率高达80%,电阻率降至2.5×10~(-3)Ωcm。并且,Nb掺杂导致了TiO_2薄膜的吸收限产生蓝移,且蓝移程度随氧含量的改变而有所不同。研究认为,氧含量改变了Nb掺杂TiO_2薄膜晶体的结构形貌以及Nb杂质和氧空位提供的有效载流子浓度,从而直接影响了Nb掺杂TiO_2薄膜的光电性能。
Three-target magnetron sputtering method was used to prepare Nb doped TiO 2 transparent conductive films on glass substrate. The structure and optical properties of the films at different oxygen contents were investigated. The experimental results show that the change of oxygen content can change the grain size, surface morphology, light transmittance and resistivity of Nb-doped TiO_2 crystal. When the oxygen content is 2% Anatase phase Nb doped TiO 2 film, the resulting film visible light transmittance of up to 80%, the resistivity dropped to 2.5 × 10 -3 Ωcm. Furthermore, Nb doping results in a blue shift in the absorption of the TiO 2 film, and the degree of blue shift varies with the oxygen content. The results show that the oxygen content changes the structure morphology of Nb-doped TiO_2 films and the effective carrier concentration provided by Nb impurities and oxygen vacancies, which directly affects the optoelectronic properties of Nb-doped TiO_2 films.