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文章研究了InAlN/GaN和引入AlN界面插入层形成的InAlN/AlN/GaN材料的输运性质.样品均在蓝宝石上以脉冲金属有机物化学气相淀积法生长,霍尔迁移率变温特性具有典型的二维电子气(2DEG)特征.综合各种散射机理包括声学形变势散射、压电散射、极性光学声子散射、位错散射、合金无序散射和界面粗糙度散射,理论分析了温度对迁移率的影响,发现室温下两种材料中2DEG支配性的散射机理都是极性光学波散射和界面粗糙度散射;AlN插入层对InAlN/GaN材料迁移率的改善作用一方面是免除2DEG的合金无序散射,另外还显著改善异质界面,抑制了界面粗糙度散射.考虑到2DEG密度也是影响其迁移率的重要因素,结合实验数据给出了晶格匹配InAlN/GaN和InAlN/AlN/GaN材料的2DEG迁移率随电子密度变化的理论上限.
The transport properties of InAlN / AlN / GaN materials formed by the insertion of InAlN / GaN into the AlN interface were investigated.The samples were all grown on a sapphire substrate by pulsed metalorganic chemical vapor deposition Dimensional electron gas (2DEG) .According to various scattering mechanisms, including acoustic deformation potential scattering, piezoelectric scattering, polar optical phonon scattering, dislocation scattering, alloy disordered scattering and interface roughness scattering, It is found that the dominant scattering mechanism of 2DEG in both materials at room temperature is polar optical scattering and interface roughness scattering. The effect of AlN insertion layer on the mobility of InAlN / GaN materials is to avoid the 2DEG The results show that the lattice-matched InAlN / GaN and InAlN / AlN / AlN / AlN / AlN / AlN / The theoretical upper limit of 2DEG mobility of GaN material as a function of electron density.