论文部分内容阅读
动态随机存储器芯片是集成电路中销售量和销售额最大的单一产品.本文介绍了DRAM存储单元的基本原理并回顾了DRAM的技术发展与关键创新,总结了多种先进技术节点的DRAM芯片制造的关键工艺技术.分析了电容结构、阵列访问晶体管、存储器单元结构等方面的技术演进.介绍了多种基于U形沟道晶体管的DRAM存储单元以及6F2存储单元的制造方法.基于多项关键技术突破,对下一代DRAM芯片的关键器件工艺的技术发展趋势进行了推测.即:(1)阵列选择晶体管持续使用U形晶体管;(2)低k材料会被大规模使用来降低位线寄生电容;(3)提高灵敏放大电路的灵敏度和随温度来动态调整刷新频率来降低对存储电容的要求;(4)更多关注低功耗设计而不是一味地增大存储容量.
DRAM chips are the single product with the largest sales and sales volume in integrated circuits.This paper introduces the basic principle of DRAM memory cells and reviews the DRAM technology development and key innovations, summarizes the DRAM chip manufacturing of a variety of advanced technology nodes Key technology, the technology evolution of capacitance structure, array access transistor and memory cell structure are analyzed, and a variety of DRAM memory cells based on U-shaped channel transistors and manufacturing methods of 6F2 memory cells are introduced.A number of key technology breakthroughs (1) array selection transistors continue to use U-shaped transistors; (2) low-k materials will be used on a large scale to reduce bit line parasitic capacitance; (3) increase the sensitivity of the sensitive amplifier circuit and dynamically adjust the refresh rate with temperature to reduce the storage capacitor requirements; (4) pay more attention to low-power design rather than blindly increase the storage capacity.