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很多年来,半导体工业上生产多晶硅、二氧化硅、氮化硅和无定型硅都是采用标准的常压冷壁化学汽相淀积技术.而在半导体器件工艺中,随着大规模集成电路的发展和超大规模集成电路的出现,对用常压CVD制备的半导体膜和绝缘膜的要求越来越高,原来的常压CVD技术淀积方法已经不能满足这种要求,人们开始研究新的技术来满足电路对工艺的要求.
For many years, polysilicon, silicon dioxide, silicon nitride, and amorphous silicon have been produced in the semiconductor industry using standard atmospheric-pressure cold-wall chemical vapor deposition techniques. In semiconductor device technology, with the development of large scale integrated circuits Development and development of very large scale integrated circuits have become increasingly demanding for semiconductor films and insulating films prepared by atmospheric pressure CVD. The original atmospheric pressure CVD deposition method can no longer meet this requirement, and people are beginning to study new technologies To meet the circuit requirements of the process.