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以SnCl4·5H2O为原料,乙二胺为溶剂,用溶剂热法在180℃合成了SnO2纳米粒子,用XRD和TEM对其结构和形貌进行了表征,对SnO2纳米粒子的红外谱图、漫反射谱图以及光致发光性能进行了分析,探讨了乙二胺辅助合成SnO2纳米粒子的化学原理和生长机制。结果表明,用乙二胺辅助成长法合成的SnO2纳米粒子的粒径在40nm左右,粒径分布均匀,分散性较好。SnO2纳米粒子光致发光在340、432和672nm处有3个强峰,在472和540nm处有2个弱峰,其中340nm处的峰为紫外近带边激子发射峰,432、472和540nm处的峰是由氧缺陷引起的,672nm处的峰归因于表面态的氧缺陷引起的能带中深能级跃迁。
Using SnCl4 · 5H2O as raw material and ethylenediamine as solvent, SnO2 nanoparticles were synthesized by solvothermal method at 180 ℃. The structure and morphology of SnO2 nanoparticles were characterized by XRD and TEM. The infrared spectra of SnO2 nanoparticles, Reflectance spectra and photoluminescence properties were analyzed. The chemical principles and growth mechanism of ethylene diamine-assisted synthesis of SnO2 nanoparticles were discussed. The results show that SnO 2 nano-particles synthesized by ethylenediamine-assisted growth have a particle size of about 40 nm, uniform particle size distribution and good dispersibility. The photoluminescence of SnO2 nanoparticle has three strong peaks at 340, 432 and 672 nm, two weak peaks at 472 and 540 nm, the peak at 340 nm is the ultraviolet near-band exciton emission peak, the peak at 432, 472 and 540 nm The peak attributed to oxygen defects, the peak at 672 nm is due to the oxygen vacancy in the surface state caused by the deep level transition in the energy band.