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设计了metal-polysilane-silicon(MPS)结构.首次发现MPS结构具有电容-电压(C-V)特性,许多MPS结构的C-V曲线平带电压为正,且其C-V特性与聚硅烷枝化度一致,即随着聚硅烷枝化度提高,MPS结构C-V曲线明显向电压轴正向漂移.聚硅烷MPS结构有望设计成测定聚硅烷枝化度装置.
The structure of metal-polysilane-silicon (MPS) was designed. For the first time, the capacitance-voltage (CV) characteristics of MPS were found. The CV curves of many MPS structures were positive and the CV characteristics were consistent with that of polysilanes As the degree of polysilaning increases, the CV curve of the MPS structure shifts significantly to the positive side of the voltage axis, and the polysilane MPS structure is expected to be designed to measure the polysilane degree of branching.