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本文采用中频衰减法和微带测试电路.测量了超高频应用的低噪声GaAs双栅肖特基势垒栅场效应晶体管(以下简称GaAS双栅MESFET)的最小噪声系数NF_(min)、相应功率增益G.和增益控制量G_R,借助网络分析仪测量了S参数.测试表明,1GHz下最佳噪声系数NF_0为0.8dB,而G_a、G_R可达11.5dB和48dB,在0.5～2GHz频带内,器件处于稳定工作状态.文中对第二栅端口反射系数Γ_3对G_a和NF_(min)的影响作了讨论,据此给出了UHF频带的测试电路.
In this paper, IF attenuation method and microstrip test circuit are used.The minimum noise figure NF min of low noise GaAs double gate Schottky barrier field effect transistor (GaAs dual gate MESFET) Power gain G. and gain control G_R, measured by S-analyzer network parameters.Experiments show that the best noise figure NF_0 at 1GHz 0.8dB, and G_a, G_R up to 11.5dB and 48dB, in the 0.5 ~ 2GHz band , And the device is in a steady state of operation.The influence of the reflection coefficient Γ_3 of the second gate port on G_a and NF_ (min) is discussed, and the test circuit of the UHF band is given.