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采用传输矩阵方法分析极化诱导的内建电场对Mnδ掺杂的GaN/AlxGa1-xN量子阱居里温度(TC)的调制作用.通过解薛定谔方程计算出在不同的内建电场条件下半导体量子阱局域态内的基态空穴能级和波函数分布情况,并在此基础上确定量子阱内Mnδ掺杂情况下TC随内建电场的变化趋势,分析了不同量子阱结构引起的内建电场分布变化及其对TC的影响.在耦合双量子阱中通过调节左右阱的不对称性可以得到TC近3倍的增长.
The transfer matrix method was used to analyze the modulation effect of polarization-induced internal electric field on the Curie temperature (TC) of Mnδ-doped GaN / AlxGa1-xN quantum wells. The semiconductor quantum under different built-in electric field And the distribution of ground-state hole energy levels and wave functions in the well local-state well. Based on this, the change trend of TC with built-in electric field in the quantum well with Mnδ doping is determined. The built-in The change of electric field distribution and its influence on TC can be nearly three times the increase of TC by adjusting the asymmetry of the left and right wells in the coupled double quantum wells.