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采用 X射线三轴晶衍射法 ,根据 As间隙原子对作为过量 As在 Ga As单晶材料中存在的主要形式的模型 ,可以无损、高精度测量半绝缘 Ga As单晶的化学配比 .并探讨了引起晶格变化的原因及其与熔体组分的关系 ,对于制备高质量 Ga As单晶及其光电器件具有重要的意义 .
According to X-ray triaxis diffraction method, the stoichiometry of semi-insulating GaAs single crystal can be measured without damage and with high precision according to As-interstitial pair as the main form of the existence of excessive As in Ga As single crystal material. The reason of crystal lattice change and its relationship with the melt composition are of great significance for preparing high quality Ga As single crystal and its optoelectronic devices.