【摘 要】
：
运用超声雾化热分解法制备了纯TiO2薄膜,并通过超声雾化分解和电子束蒸发两种方法注入了Ru,Rh,Ir杂质,研究了各种薄膜对O2的传感特性,并利用透射电镱和原子力显微镜分析薄膜
【机 构】
：
重庆师范大学物理学院光学工程重庆市重点实验室,
论文部分内容阅读
运用超声雾化热分解法制备了纯TiO2薄膜,并通过超声雾化分解和电子束蒸发两种方法注入了Ru,Rh,Ir杂质,研究了各种薄膜对O2的传感特性,并利用透射电镱和原子力显微镜分析薄膜晶体的微观结构。实验发现,纯TiO2薄膜在高工作温度(400℃)下对O2的传感性也较弱,而通过超声雾化分解法制备的掺杂TiO2薄膜工作温度明显降低到300℃,传感灵敏度极大提高,响应时间缩短,并且超声雾化分解法制备比电子束蒸发注入的传感薄膜具有更好的气敏传感特性。
Pure TiO2 thin films were prepared by ultrasonic atomization and thermal decomposition, and Ru, Rh and Ir impurities were implanted by ultrasonic atomization and electron beam evaporation. The sensing properties of various thin films on O2 were studied. Electro Ytterbium and Atomic Force Microscopy Analysis of the Microstructure of Thin Films. The experimental results show that the pure TiO2 film has low sensitivity to O2 at high working temperature (400 ℃), while the working temperature of doped TiO2 film prepared by ultrasonic atomization method is obviously reduced to 300 ℃. Sensitivity pole Greatly improving the response time, and the ultrasonic atomization decomposition method has better gas sensing properties than the sensor film injected by electron beam evaporation.
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