利用时域有限差分法,对基于绝缘体上硅(SOI)的微环谐振腔的微环波导宽度对传输性能、Q值的影响进行了理论分析与仿真。研究结果表明,单模条件下,波导越宽,Q值越大。仿真优化结果表明微环半径为10μm、微环波导宽度为600nm时,1.55μm附近的谐振峰的消光比为18.2dB,计算出Q值约为2.2×10~5。进一步研究了微环与直波导间距、平板高度对Q值的影响。耦合间距增大时,由于耦合效率降低,Q值则逐渐提高;随着平板区厚度的减小,辐射损耗会越小,因此Q值增大。研究结果为微环谐振腔的进一步优化和设计提供了参考。 The time-domain finite difference method is used to theoretically analyze and simulate the effect of the microcirculant waveguide width on the transmission performance and Q value based on silicon on insulator (SOI). The results show that under the single-mode condition, the wider the waveguide, the larger the Q value. The simulation results show that the extinction ratio of the resonant peak near 1.55μm is 18.2dB and the Q value is about 2.2 × 10 ~ 5 when the micro-ring radius is 10μm and the micro-waveguide width is 600nm. Further study of the micro-ring and straight waveguide spacing, slab height on the Q value. When the coupling distance increases, the Q value increases gradually due to the decrease of the coupling efficiency. As the thickness of the flat plate decreases, the radiation loss will be smaller and the Q value will increase. The results provide a reference for the further optimization and design of the micro-ring resonator.