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目前,信息存取工业正在发生变革,因此,很难准确地预测未来的存储技术。已出现了一些诸如磁泡存储器、电荷耦合器件、电子束存储器、横挡壁存储器等弥补取数时间差距的技术。这些技术都有程度不同的希望,但是只有在证明其一系列重要性能指标较高之后,它们才能在存储器工业领域中得到发展。这些指标包括:产品的可靠性、性能、容量和位价格。因此,一个厂家要想使自己的产品占领先地位就必须开展技术革新。这是因为存储器工业的变化是发生在包括材料、工艺方法、产品和系统技术等的广阔范围里。
The information-access industry is currently undergoing change, so it is difficult to predict future storage technologies accurately. A number of technologies have emerged such as bubble memories, charge-coupled devices, e-beam memories, and transverse wall memories to compensate for the time lag between shots. All of these technologies have varying degrees of hope, but they can not be developed in the memory industry until they have been demonstrated to have a significant set of key performance indicators. These metrics include: product reliability, performance, capacity, and bit price. Therefore, if a manufacturer wants to take the lead in its own products, it must carry out technological innovation. This is because changes in the memory industry occur over a broad range of materials, process methods, products and system technologies.