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在点源热脉冲传热模型的理论基础上,采用格林函数法建立了由于单个杂质缺陷吸收引起的温度场模型,得到了杂质附近温度场的解析表达式,分析了激光脉冲参数对温度场的影响情况,并在单个杂质吸收的理论基础上推导得到KDP晶体某一区域内含多个杂质吸收的模型。结果表明杂质吸收引起的温度变化与激光脉冲参数密切相关。当杂质间距离小于激光持续时间内产生的热扩散距离时,就会引起杂质间温度场的叠加,并且当杂质密度大到一定程度时,会使杂质团区域的温升加剧,导致晶体发生激光诱导损伤的可能性加大。
Based on the theory of point source heat pulse heat transfer model, the temperature field model due to the absorption of a single impurity defect is established by using Green’s function method. The analytical expression of the temperature field near the impurity is obtained, and the influence of laser pulse parameters on the temperature field Influence, and based on the theory of single impurity absorption, a model of multiple impurity absorption in a certain region of KDP crystal was deduced. The results show that the temperature change caused by impurity absorption is closely related to the laser pulse parameters. When the distance between the impurities is less than the thermal diffusion distance generated during the laser duration, the temperature field of the impurities will be superposed, and when the impurity density is large to a certain extent, the temperature rise of the impurity clusters will be intensified, resulting in the occurrence of laser The possibility of inducing injury is increased.