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Hydrogenated nanocrystalline silicon fi1ms are deposited onto glass substrates at different substrate temperatures (140-400℃) by hot-filament chemical vapor deposition.The effect of substrate temperature on the structural properties are investigated.With an increasing substrate temperature, the Raman crystalline volume fraction increases, but decreases with a further increase.The maximum Raman crystalline volume fraction of the nanocrystalline silicon 61ms is about 74% and also has the highest microstructural factor (R = 0.89) at a substrate temperature of 250℃.The deposition rate exhibits a contrary tendency to that of the crystalline volume fraction.The continuous transition of the fi1m structures from columnar to agglomerated is observed at a substrate temperature of 300℃.The optical band gaps of the grown thin 61ms declines (from 1.89 to 1.53 eV) and dark electrical conductivity increases (from about 10-10 to about 10-6 S/cm) with the increasing substrate temperature.