论文部分内容阅读
据《中国电子报》报道,铜和低 K 介电互联材料的引入表明,改变材料是很困难的。在前不久举行的 VLSI 技术研讨会上,技术专家积极准备面对材料的挑战,范围从新的门极氧化物到 SOI 及延展硅隧道。专家表示,今后至少有4到5个转变。高 K 门极绝缘材料将代替二氧化硅,金属门电极将代替多晶硅,绝缘体上硅(SOI)和延展硅可以用于提高电流驱动能力。在未来十年内,平面 CMOS 可能会让位给垂直双门结构,例如中国 Taiwan Semiconductor Manufac-turing Co.Ltd.首席技术官 Chenming Calvin Hu 提出的 FinFET 结构。将所有这些因素一起考虑,材料的改变将标志着一个巨变的时代。类似于引入CMOS 电路设计的80年代。
According to the China Electronics News, the introduction of copper and low-k dielectric interconnects suggests that changing materials is difficult. At a recent VLSI Technology Symposium, technologists were prepared to face material challenges, ranging from new gate oxides to SOI and extended-silicon tunnels. Experts say there will be at least four to five changes in the future. High-K gate insulating material will replace silicon dioxide, metal gate electrode will replace polysilicon, silicon on insulator (SOI) and extended silicon can be used to improve the current drive capability. In the next decade, planar CMOS may give way to vertical double-gate structures, such as the FinFET structure proposed by Chenming Calvin Hu, chief technology officer of Taiwan Semiconductor Manufacturing Co. Ltd. of China. Taking all of these factors together, material changes will mark a time of tremendous change. Similar to the introduction of CMOS circuit design of the 80’s.