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基于高浓度Cl~-能增强溶除杂质的效果,稀酸液有利于解吸碱金属离子,以及考虑到尽可能采用含钠量少的清洗液,以便操作时对硅片无损坏和有利于人体健康,提出了以多量浓HCl配以少量HNO_3的混合液为主体清洗、再以稀HCl浸洗硅片的方法。本方法用MOSC-V测试法初步检测证明,清洗效果较常规硫酸法为佳。本方法试用于3DA_1生产的初步实验表明,对提高管芯中测合格率有显著作用;试用于3CG_2的生产,对增强稳定性有明显效果。
Based on the high concentration of Cl ~ - can enhance the effect of removing impurities, dilute acid solution is conducive to desorption of alkali metal ions, and taking into account the use of sodium content as little as possible cleaning solution for operation without damage to the silicon and beneficial to the human body Health, proposed a large amount of concentrated hydrochloric acid with a small amount of HNO_3 mixed solution as the main cleaning, and then dipping HCl wafer method. The method used MOSC-V test preliminary test proved that the cleaning effect is better than the conventional sulfuric acid method. The preliminary experiment of this method for 3DA_1 production shows that it has a significant effect on improving the yield of the test in the die. The trial production in 3CG_2 has obvious effect on enhancing the stability.