论文部分内容阅读
采用改进的液相外延浸渍技术,在Te溶液中生长出Cd组分(x值)为0.17～0.4的HgCdTe外延层,系统中未加汞长出了纯CdTe外延层,这样就首次制成了背面照射HgCdTe/CdTe异质结构的二极管。而这种外延层是在CdTe衬底上生长的,Cd取向为(100)、(110)和(111),Te的取向为(111),最佳的表面是由取向为(110)Cd得到的。其生长装置如图1所示,它主要是由内、外两个石英管组成,后者装在两个不锈钢凸缘之间,以保持高的氩气压。生长时,管内压力维持在200～300磅/英寸~2。在生长过
An improved HvCdTe epitaxial layer with Cd content (x value) of 0.17 ~ 0.4 was grown in Te solution by using the improved liquid-phase epitaxial impregnation technique. The pure CdTe epitaxial layer was grown without adding mercury in the system, Backside illuminated HgCdTe / CdTe heterostructure diodes. This epitaxial layer is grown on a CdTe substrate with Cd orientations of (100), (110) and (111), with Te orientated at (111) and optimal surface orientated at (110) Cd of. Its growth device shown in Figure 1, which is mainly composed of two quartz tubes inside and outside, the latter installed between two stainless steel flange to maintain high argon pressure. During growth, the pressure in the tube is maintained at 200-300 psia. Growing up