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对高熔点聚碳硅烷的合成反应条件进行了较为详细的研究，并通过改变化学反应的温度、压力和反应时间制备出了熔点高达３８０ ℃、数均分子量Ｍｎ ＞ ３ ０００ 、陶瓷收率达７９ ％ （ 质量分数） 以上的陶瓷先驱体聚合物。该先驱体溶解性能好，并具有良好的纺丝性能。文中还利用ＩＲ、ＴＧ—ＤＴＡ 等手段对该先驱体的热解机理进行了初步探讨。
The synthesis reaction conditions of polycarbosilane with high melting point were studied in detail. The melting point was up to 380 ℃, the number average molecular weight Mn> 3000 and the ceramic yield 79% by changing the temperature, pressure and reaction time of chemical reaction % (Mass fraction) above the ceramic precursor polymer. The precursor dissolves well and has good spinning properties. The precursors pyrolytic mechanism was also discussed by IR, TG-DTA and other means.