论文部分内容阅读
用光学显微镜和扫描电镜研究了双滑移取向（［０３４］，［１１７］）Ｃｕ单晶循环饱和后的表面形貌，塑性分切应变幅（γｐｌ）低于１０~（－３）时，［０３４］晶体表面上要为主滑移系的驻留滑移带（ＰＳＢｓ）占据，次滑移只在边缘区域启动，其ＰＳＢｓ细窄（＜１μｍ），体积百分数在１％以下．γｐｌ＞１０~（－３）时，次滑移开始在试样的中部启动，同时，表面出现二种贯穿晶体的宏观形变带（ＤＢＩ，ＤＢＩＩ），滑移带在形变带内集中．［１１７］晶体在γｐｌ＝４．４×１０~（－４）时，双滑移现象已十分明显．γｐｌ＞１０~（－３）时，表面也形成与前者相似的形变带．ＤＢＩ的惯习面与主滑移面平行（［０３４］晶体）或接近（［１１７］晶体），ＤＢＩＩ的惯习面则与前者垂直，文章讨论了形变带形成的可能原因．
The surface morphology of the double slip orientation ([034], [117]) Cu single crystal after the saturation was studied by optical microscopy and scanning electron microscopy. When the plastic strain amplitude (γpl) is less than 10 -3, [034] Crystalline surfaces are occupied by resident slip bands (PSBs) of the main slip system, with sub-slip activated only in the marginal zone with narrow PSBs (<1 μm) and volume percent below 1%. When γpl> 10 ~ (-3), sub-slip starts in the middle of the sample, and at the same time, two kinds of macroscopic deformation bands (DBI, DBII) appear on the surface. [117] The phenomenon of double slip is very obvious at γpl = 4.4 × 10 -4. γpl> 10 ~ (-3), the surface is also formed with the former similar to the deformation zone. DBI’s habitus plane is parallel to the main slip plane ([034] crystal) or close to ([117] crystal), the habit plane of DBII is perpendicular to the former, and the possible reasons for the formation of deformation bands are discussed.