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作者们指出,与金原子互作用使原有界面正电荷减少的界面缺陷中,引起固定氧化层电荷Q_(?)(=qN_(o2)的这种类型占有较大的比重。该类型一般认为是氧空位。如果保持界面金原子浓度一定,通过退火等工艺措施使固定氧化层电荷(氧空位)密度N_(ox)变化,则它们反应所生的负电性金密度N_(Au)也将有相应的变化。我们把能引起N_(ox)灵敏变化的SiO_2薄膜的生长温度和于氧下的退火温度作为调变参数,在实验上观察了这种对应的变化。
The authors point out that the type of Q_ (?) (= QN_ (o2)) that causes the fixed oxide charge accounts for a large proportion of the interface defects that interact with the gold atoms to reduce the positive charge on the original interface Is the oxygen vacancies.If the gold atom concentration in the interface is constant, the density of the fixed oxide (oxygen vacancy) N_ (ox) changes by annealing and other measures, then the negative charge of gold N_ (Au) The corresponding changes were observed experimentally by using the growth temperature of the SiO 2 thin film and the annealing temperature under oxygen as the modulation parameters.