We prepare a new type of multi-wavelength infrared laser diode with four chips,three wavelengths(865 nm,905 nm and 1064 nm) and two working modes(pulse and single).The preparation technology of the diode includes two key processes:heat-sink and packaging processing technique to package four different chips on a same heat-sink.The experimental results show that four output peak-wavelengths of the prototype diode all possess favorable stability. We prepare a new type of multi-wavelength infrared laser diode with four chips, three wavelengths (865 nm, 905 nm and 1064 nm) and two working modes (pulse and single). The preparation technology of the diode includes two key processes: heat -sink and packaging processing technique to package four different chips on a same heat-sink. The experimental results show that four output peak-wavelengths of the prototype diode all possessing favorable stability.