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在常压条件下采用化学气相淀积(CVD)技术在有石墨烯插入层的衬底上生长GaN纳米线,研究了生长温度、石墨烯插入层、催化剂等因素对GaN纳米线的形貌、光学特性以及结构的影响。通过扫描电子显微镜(SEM)、光致发光(PL)谱、拉曼(Raman)谱和透射电子显微镜(TEM)等表征手段对GaN纳米线的形貌、光学特性以及结构进行表征。结果表明,在1 100℃条件下,同时有石墨烯插层和催化剂的衬底表面能够获得低应力单晶GaN纳米线。石墨烯、催化剂对于获得低应力单晶GaN纳米线有重要的作用。
GaN nanowires were grown on substrates with graphene intercalation layer by chemical vapor deposition (CVD) at atmospheric pressure. The effects of growth temperature, graphene intercalation layer and catalyst on the morphology, Optical characteristics and the impact of the structure. The morphology, optical properties and structure of the GaN nanowires were characterized by SEM, PL, Raman and TEM. The results show that low-stress single crystal GaN nanowires can be obtained on the substrate surface with graphene intercalation and catalyst at 1100 ℃. Graphene and catalyst play an important role in obtaining low-stress single crystal GaN nanowires.