论文部分内容阅读
本文指出两种不同的补偿机理是引起深硼注入后观测到的载流子移出的原因:1)注入损伤,它主要引进导带下约0.55eV处的一个深能级窄带并且可在500℃左右温度下退火消除;2)形成硼施主络合物,可用它解释S70℃退火后仍观测到的载流子移出效应。
It is pointed out that two different compensating mechanisms are responsible for the carrier removal observed after deep boron implantation: 1) Implant damage, which mainly introduces a deep-level narrow band at about 0.55eV under the conduction band and can be operated at 500 ℃ Annealing at a temperature of around left and right; and 2) formation of a boron donor complex that can explain the effect of carrier removal still observed after annealing at S70 ° C.