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为了用高温退火和自电阻加热工艺生产大尺寸和可选择形状的钼单晶,研究了掺杂元素对二次晶粒长大行为的影响和反常晶粒长大的机制。结果发现,一定数量的CaO和/或MgO作为加工钼晶粒长大行为的抑制剂是有效的:最初,CaO或MgO在原有再结晶晶粒边界上析出,抑制了正常的晶粒长大,相反,当它们在较高的温度下分解为单个元素时则容许反常的晶粒长大。所以,容易由热加工的钼材制取10×40×200毫米的大尺寸单晶片,弯曲角约为70°的、2毫米厚的弯曲单晶片,φ5×210毫米的单晶棒和尺寸为16(外径)×9(内径)×200(长度)毫米的单晶管。因此,大尺寸和可选择形状钼单晶的制备将可能扩大这一材料的应用。
In order to produce molybdenum single crystals of large size and shape with high temperature annealing and self-resistance heating process, the effect of doping elements on the growth behavior of secondary grains and the mechanism of abnormal grain growth were studied. As a result, it has been found that a certain amount of CaO and / or MgO is effective as an inhibitor for processing the growth behavior of molybdenum grains. Initially, CaO or MgO precipitates on the boundaries of the original recrystallized grains and suppresses normal grain growth, In contrast, abnormal grain growth is tolerated when they decompose into individual elements at higher temperatures. Therefore, it is easy to produce a large-sized single crystal wafer of 10 × 40 × 200 mm, a curved single crystal wafer of 2 mm thickness, a single crystal crystal rod of φ5 × 210 mm, a single crystal silicon rod having a size of 16 (outer diameter) × 9 (inner diameter) × 200 (length) mm. Therefore, the preparation of large size and optionally shaped molybdenum single crystal will likely expand the application of this material.