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采用磁控溅射法在Pt/Ti/Si O2/Si基底上制备立方焦绿石结构Bi1.5Mg1.0Nb1.5O7薄膜。通过控制750℃下后退火时间来控制薄膜的平均晶粒尺寸,用沉积时间控制膜厚。研究不同晶粒尺寸和膜厚对BMN薄膜相结构、微观形貌和介电性能的影响。结果表明,当BMN薄膜平均晶粒尺寸为45 nm、膜厚为430 nm时,薄膜介电性能提高显著,1 MHz下介电常数为112.4,介电损耗为0.001 82,在0.93 MV/cm外加电场条件下,介电调谐率为27.7%。
A cubic pyrochlore structure Bi1.5Mg1.0Nb1.5O7 thin film was prepared on a Pt / Ti / Si O2 / Si substrate by magnetron sputtering. The average grain size of the film is controlled by controlling the post-annealing time at 750 ° C, and the film thickness is controlled by the deposition time. The effects of different grain size and film thickness on the phase structure, morphology and dielectric properties of BMN thin films were investigated. The results show that the dielectric properties of BMN thin films increase obviously when the average grain size of BMN is 45 nm and the film thickness is 430 nm. The dielectric constant of BMN thin film is 112.4 at 1 MHz and the dielectric loss is 0.001 82 at 0.93 MV / cm Under electric field conditions, the dielectric tuning rate is 27.7%.