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将靶材与真空腔之间的伏安特性引入正-反欧姆过渡区间,采用脉冲控制模式研究不同靶电流密度对镀层均匀性和膜/基结合强度的影响规律。实验发现,当靶面放电区电流密度(Id)由0.083 A/cm~2增加至0.175 A/cm~2时,靶电压随靶电流密度的增大呈线性增大关系,与之对应的镀层厚度差由7.984μm增大至14.011μm;但当Id由0.175 A/cm~2增大至0.25 A/cm~2时,靶电压随靶电流密度的增大呈线性减小关系,与之对应的镀层厚度差则由14.011μm减小至10.077μm;而薄膜厚度减小率由97.38%(Id=0.083 A/cm~2)降低为89.491%(Id=0.25 A/cm~2);另外,在反欧姆区,膜/基结合强度随Id的增大而快速增大。以上结果表明:反欧姆环境下有利于改善镀层的均匀性和提高膜/基结合强度。
The voltammetric characteristics between the target and the vacuum chamber were introduced into the forward-reverse Ohm transition region, and the influence of different target current densities on the coating uniformity and film / substrate bonding strength was studied by using pulse control mode. The experimental results show that when the current density (Id) increases from 0.083 A / cm2 to 0.175 A / cm2, the target voltage increases linearly with the increase of the target current density. The corresponding coating The thickness difference increases from 7.984μm to 14.011μm. When the Id increases from 0.175 A / cm 2 to 0.25 A / cm 2, the target voltage decreases linearly with the increase of the target current density. Correspondingly, (Id = 0.25 A / cm ~ 2) decreased from 97.38% (Id = 0.083 A / cm ~ 2) to 89.491% (Id = 0.25 A / cm ~ 2). In addition, the thickness of the coating decreased from 14.011μm to 10.077μm, In the anti-ohmic region, the film / substrate bond strength increases rapidly with increasing Id. The above results show that: the anti-ohmic environment is conducive to improving the uniformity of the coating and improve the film / substrate bonding strength.