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通过热重量分析(TGA)、X射线衍射(XRD)和扫描电镜(SEM)等研究了MoSi2及MoSi2-AlCr2准二元系合金在500℃下的低温抗氧化性能。结果表明:采用热压烧结方法制备的纯MoSi2及MoSi2-AlCr2准二元系合金在500℃低温循环氧化条件下具有良好的低温抗氧化性,氧化100 h均未发生“Pesting”现象。同时发现,纯MoSi2的氧化动力学曲线符合抛物线形规律,而MoSi2-AlCr2准二元系合金在20～100 h阶段,氧化动力学曲线基本上呈直线型。由此可见,添加AlCr2可显著提高MoSi2的低温抗氧化能力。
The low temperature oxidation resistance of MoSi2 and MoSi2-AlCr2 quasi-binary alloys at 500 ℃ was investigated by thermogravimetric analysis (TGA), X-ray diffraction (XRD) and scanning electron microscopy (SEM) The results show that pure MoSi2 and MoSi2-AlCr2 quasi-binary alloys prepared by hot-pressing have good low-temperature oxidation resistance under low temperature cyclic oxidation at 500 ℃ and no “Pesting” phenomenon after 100 h oxidation. At the same time, it was found that the oxidation kinetics curve of pure MoSi2 conformed to the parabolic law, while the oxidation kinetics curve of MoSi2-AlCr2 quasi-binary system alloy was almost linear in the period of 20-100h. Thus, adding AlCr2 can significantly improve the low temperature oxidation resistance of MoSi2.