本文利用多种实验手段,包括OTCS,DLTS,低温PL等,对影响LEC SI-GaAs单晶电学性质热不稳定的可能因素进行了系统研究.在仔细分析对比文献发表的实验结果的基础上,提出了普遍成立的多能级电学补偿模型.这个模型不但能成功地对SI-GaAs单晶热不稳定的本质进行合理解释,而且还为研制高热稳定的GaAs材料提供了科学依据. In this paper, we use a variety of experimental methods, including OTCS, DLTS, low temperature PL, etc. to systematically study the possible factors that affect the thermal instability of the electrical properties of LEC SI-GaAs single crystal.On the basis of careful analysis of the experimental results published in the comparative literature, A universal multi-level electrical compensation model is proposed, which not only can successfully explain the essence of SI-GaAs single-crystal thermal instability, but also provides a scientific basis for the development of high-thermal-stability GaAs material.