论文部分内容阅读
In this paper,a novel and reliable structure of the side passivated emitter and the rear locally-diffused(PERL)silicon light emitting diodes(LEDs)is proposed.The inverted pyramids surface,the important interface in this structure,is given according to the experiment.The results show that the inverted pyramids surface has a low refection about 8%,in the anisotropic etching 70 ℃,5% TMAH concentration,corrosion time of 90 min or 30 min.Low refection means high light emitting rate.Most of the structure and manufacturing process can be compatible with planar CMOS technology,which makes the silicon LED greater potential for development in the future.
In this paper, a novel and reliable structure of the side passivated emitter and the rear locally-diffused (PERL) silicon light emitting diodes (LEDs) is proposed. The inverted pyramids surface, the important interface in this structure, is given according to the the results show that the inverted pyramids surface has a low refection about 8%, in the anisotropic etching at 70 ° C., 5% TMAH concentration, corrosion time of 90 min or 30 min. Low refection means high light emission rate. structure and manufacturing process can be compatible with planar CMOS technology, which makes the silicon LED greater potential for development in the future.